ISPSD2021 | The 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Short Course Program

Silicon Power Devices and Power ICs

Wai Tung Ng, University of Toronto, Canada

Wai Tung Ng is a professor with the Edward S. Rogers Sr. Dept. of Electrical and Computer Engineering from the University of Toronto. He is also the director for the Toronto Nanofabrication Center (TNFC), and open access research facility. Prof. Ng is a recognized researcher in the areas of power semiconductor devices and smart power integrated circuits. His research group has demonstrated many world-first innovative designs, including a digitally reconfigurable DC-DC power converter with resizable output stage [ISPSD 2006], a superjunction power FinFET [IEDM 2010], and a series of smart gate driver integrated circuits for Insulated Gate Bipolar Transistors (IGBTs) and Gallium Nitride (GaN) power transistors. Prof. Ng’s group is actively engaged in the promotion of digitally reconfigurable gate driver circuits to improve the switching characteristics of GaN and Silicon Carbide (SiC) power transistors. These include many novel features such as one-step dead-time correction, indirect current sensing, dynamic driving strength to suppress Electromagnetic Interference (EMI), liquid-cooled packaging for intelligent power modules (IPMs), etc. Prof. Ng earned his bachelor, master and doctoral degrees in Electrical Engineering from the University of Toronto, in 1983, 1985 and 1990, respectively.

Abstract

Silicon power semiconductor devices are still the work horse for majority of the current power electronic applications due to their cost-effectiveness and proven reliability. Starting with the power rectifiers, thyristors and power MOSFET in the early days, silicon power technology continues to evolve to the state-of-the-art superjunction power MOSFETs and advanced IGBTs with trench gate and pillar emitter. Although the emergence of wide bandgap materials has promoted the wide acceptance of GaN and SiC power transistors, silicon-based power devices still dominate the largest market share and continue to receive significant development effort.

In addition, the maturity of smart power integrated circuit technology (e.g. HVCMOS and BCD processes) can further exploit the true capability of silicon power devices, either in monolithic form or in multi-chip power modules. These added features include deadtime optimization, segmented output stage, EMI suppression, current balancing, and other non-intrusive monitoring, etc. Finally, complementing advanced packing techniques with novel thermal interface materials and/or liquid cooling can further performance envelop of power devices.

This seminar will provide a brief summary on the current status of silicon based power devices and power ICs.