ISPSD2021 | The 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Technical Program of ISPSD2021

ISPSD2021 Program at a glance

ISPSD2021 Program at a glance

Plenary sessions

Monday May 31, 2021

Plenary 1


Kimimori Hamada(PDPlus LLC)
Wai Tung Ng(University of Toronto)

Automotive semiconductors in the CASE era

Yasushi Shinojima (MIRISE Technologies Corporation,Japan)


GaN 2.0: Power FinFETs, Complementary Gate Drivers and Low-Cost Vertical Devices

Tomás Palacios (MIT, USA)

Plenary 2


Ichiro Omura(Kyushu Institute of Technology)
Kevin Chen(Hong Kong University of Science and Technology)

Building Blocks of Past, Present and Future BCD Technologies

François Hébert (Global Foundries)


How System Basis Chips rise to the power and reliability challenges for future-proof electrification and autonomous vehicle electronic control unit designs

Erwan Hemon (NXP)

Oral sessions

Tuesday June 01, 2021



Shigeto Honda(Mitsubishi Electric Corporation)
Yi Tang(Starpower Semiconductor)

Self-turn-on Free 1200V Scaled CSTBTTM Driven by 5V Gate Voltage with Wide SOA

Koichi Nishi, Chen Zee, Koji Tanaka, Keisuke Eguchi, Takamasa Miyazaki, Akihiko Furukawa

(Mitsubishi Electric Corporation, Japan)


Singular Point Source MOS Cell Concept (S-MOS) Implemented on a Narrow Mesa Trench IGBT

Munaf Rahimo1, Iulian Nistor1, David Green2

(1mqSemi AG, Switzerland; 2Silvaco Europe Ltd., United Kingdom)


Low Switching Loss Diode of 600V RC-IGBT with New Contact Structure

Kenji Suzuki2, Takuya Yoshida1, Yuki Haraguchi2, Hidenori Koketsu2, Atsushi Narazaki2

(1Melco Semiconductor Engineering Corporation, Japan; 2Mitsubishi Electric Corporation, Japan)

Dynamic Ron & Reliability of p-GaN Gate Technologies


Grace Xing(Cornell University)
Yoshinao Miura(AIST)

Impact Ionization Induced Breakdown and Related HTRB Behaviors in 100-V p-GaN Gate HEMTs

Yan Cheng, Yuru Wang, Sirui Feng, Zheyang Zheng, Tao Chen, Gang Lyu, Yat Hon Ng, Kevin J. Chen

(The Hong Kong University of Science and Technology, China)


A Bootstrap Voltage Clamping Circuit for Dynamic VTH Characterization in Schottky-Type p-GaN Gate Power HEMT

Kailun Zhong, Han Xu, Song Yang, Zheyang Zheng, Junting Chen, Kevin J. Chen

(ECE Department, HKUST, Hong Kong)


Surface Reinforcement Technology for Suppressing Hot-Carrier-Induced Degradations in p-GaN Gate Power HEMTs

Li Zhang, Song Yang, Zheyang Zheng, Wenjie Song, Kevin J Chen

(The Hong Kong University of Science and Technology, China)


Impact of OFF-State Gate Bias on Dynamic RON of p-GaN Gate HEMT-

Zuoheng Jiang2, Mengyuan Hua2, Xinran Huang2, Lingling Li2, Junting Chen2, Kevin J. Chen1

(1Hong Kong University of Science and Technology, Hong Kong; 2Southern University of Science and Technology, China)

ICs for High Efficiency & High Reliability


Kenji Hara(Hitachi)
Nicolas Rouger(CNRS / Laplace)

The On-Chip Lateral Super-Junction IGBT in Integrated High-Voltage Low-Power Converters

Christoph Rindfleisch1, Elizabeth Kho Ching Tee3, Alexander Hölke2, Bernhard Wicht1

(1Institute of Microelectronic Systems - Leibniz University Hannover, Germany; 2X-FAB Global Services GmbH, Germany; 3X-FAB Sarawak Sdn. Bhd., Malaysia)


5 V, 300 MSa/s, 6-Bit Digital Gate Driver IC for GaN Achieving 69 % Reduction of Switching Loss and 60 % Reduction of Current Overshoot

Ryunosuke Katada2, Katsuhiro Hata2, Yoshitaka Yamauchi2, Ting-Wei Wang1, Ryuzo Morikawa2, Cheng-Hsuan Wu2, Toru Sai2, Po-Hung Chen1, Makoto Takamiya2

(1National Chiao Tung University, Taiwan; 2The University of Tokyo, Japan)


A GaN-Based Active Diode Circuit for Low-Loss Rectification

Michael Basler1, Richard Reiner1, Stefan Moench1, Patrick Waltereit1, Rüdiger Quay1, Ingmar Kallfass2, Oliver Ambacher1

(1Fraunhofer IAF, Germany; 2University Stuttgart, Institute of Robust Power Semiconductor Systems, Germany)


Gate Driver for p-GaN HEMTs with Real-Time Monitoring Capability of Channel Temperature

Alessandro Borghese, Michele Riccio, Luca Maresca, Giovanni Breglio, Andrea Irace

(University of Naples Federico II, Italy)


A Smart Gate Driver for SiC Power MOSFETs with Aging Compensation and Ringing Suppression

Mengqi Wang2, Weijia Zhang2, Wentao Cui2, Jingyuan Liang2, Haruhiko Nishio1, Hitoshi Sumida1, Hiroyuki Nakajima1, Wai Tung Ng2

(1Fuji Electric Co. Ltd., Japan; 2University of Toronto, Canada)

SiC Advanced Novel Devices


Andrei Petru Mihaila(Hitachi ABB Power Grids)
Yasuhiko Onishi(Fuji Electric)

First Demonstration of a Monolithic SiC Power IC Integrating a Vertical MOSFET with a CMOS Gate Buffer

Mitsuo Okamoto, Atsushi Yao, Hiroshi Sato, Shinsuke Harada

(AIST, Japan)


The FinFET Effect in Silicon Carbide MOSFETs

Florin Udrea

(Cambridge University, United Kingdom)


Improved Clamping Capability of Parasitic Body Diode Utilizing New Equivalent Circuit Model of SBD-Embedded SiC-MOSFET

Teruyuki Ohashi1, Hiroshi Kono2, Souzou Kanie2, Takahiro Ogata2, Kenya Sano2, Hisashi Suzuki2, Shunsuke Asaba1, Shigeto Fukatsu1, Ryosuke Iijima1

(1Corporate Research & Development Center, Toshiba Corporation, Japan; 2Toshiba Electronic Devices & Storage Corporation, Japan)


Ultra-Low Specific on-Resistance Achieved in 3.3 kV-Class SiC superjunction MOSFET

Masakazu Baba2, Takeshi Tawara2, Tadao Morimoto2, Manabu Takei1, Hiroshi Kimura1, Shinsuke Harada2

(1Fuji Electric Co., Ltd, Japan; 2National institute of Advanced Industrial Science and Technology, Japan)

Wednesday June 02, 2021

Lateral Low Voltage Devices


Tatsuya Nishiwaki(Toshiba Electronic Devices & Storage Corporation)
Hiroki Fujii(Samsung Electronics)

Experimental Study of Ultralow On-Resistance Power LDMOS with Convex-Shape Field Plate Structure

Jie Wei2, Zhen Ma2, Xiaorong Luo2, Gaoqiang Deng2, Congcong Li2, Hua Song1, Kaiwei Dai2, Yanjiang Jia2, Dezun Liao2, Sen Zhang1, Bo Zhang2

(1CSMC Technologies Corporation, China; 2University of Electronic Science and Technology of China, China)


Analysis of Anomalous Behavior During Negative Drain Input Operation of Fully Isolated nLDMOS

Atsushi Sakai2, Katsumi Eikyu1, Yotaro Goto1, Makoto Koshimizu1, Kenichiro Sonoda1, Tamotsu Ogata1

(1Renesas Electronics Corp, Japan; 2Renesas Electronics Corp., Japan)


Mitigation of Space-Charge-Modulation in 800-V JFET for HV Start-Up Circuit Toward High ON-BV Performance

Zhangyi'An Yuan2, Xinjian Li2, Ming Qiao2, Ying Cai1, Feng Jin1, Jiye Yang1, Shuhao Zhang2, Dican Hou2, Xin Zhou2, Zhaoji Li2, Bo Zhang2

(1Shanghai Huahong Grace Semiconductor Manufacturing Corporation, China; 2University of Electronic Science and Technology of China, China)


Low On-Resistance SOI-LDMOS with Mobility-Enhancing Auxiliary Cell

Jie Ma2, Long Zhang2, Jing Zhu2, Xinyu Liu2, Weifeng Sun2, Yan Gu1, Nailong He1, Sen Zhang1

(1CSMC Technologies Corporation, China; 2Southeast University, China)

SiC Device Ruggedness & Reliability


Siddarth Sundaresan(GeneSiC Semiconductor)
Hiroshi Kono(Toshiba Electronic Devices & Storage)

Comprehensive Investigation on Electrical Properties of 4H-SiC VDMOS Under Uniaxial and Biaxial Mechanical Strains

Wei Hongyu, Wu Wangran, Tang Pengyu, Yang Guangan, Liu Siyang, Sun Weifeng

(Southeast University, China)


Threshold Voltage Stability Study of 1.2kV High-K SiC Power MOSFETS Under Harsh Repetitive Switching Conditions

Stephan Wirths, Andrei Mihaila, Nick Schneider, Gianpaolo Romano, Yulieth Arango, Lars Knoll

(Hitachi ABB Power Grids, Switzerland)


Device Design to Achieve Low Loss and High short-Circuit Capability for SiC Trench MOS-FET

Yuki Mori2, Takeru Suto2, Tomoka Suematsu2, Haruka Shimizu2, Toru Masuda1, Akio Shima1

(1Hitachi, Ltd, Japan; 2Hitachi, Ltd., Japan)


Investigations of UIS Failure Mechanism in 1.2 kV Trench SiC MOSFETs Using Electro-Thermal-Mechanical Stress Analysis

Kailun Yao, Hiroshi Yano, Noriyuki Iwamuro

(University of Tsukuba, Japan)

Packaging Technologies: Integrated Modeling & Design


Tomoyuki Miyoshi(Hitachi)
Ichiro Omura(Kyushu Institute of Technology)

Novel Monolithic Integrated Device with Gate Resistor for External IGBT Clamping Leading to Enhanced Short Circuit Behavior

Wolfgang-Michael Schulz, Matthias Spang, Arendt Wintrich, Sven Berberich

(Semikron, Germany)


Electrothermal modeling, simulation, and Electromagnetic Characterization of a 3.3kV SiC MOSFET Power Module

Ciro Scognamillo1, Antonio Pio Catalano1, Alessandro Borghese1, Ravi Tripathi3, Michele Riccio1, Vincenzo D'Alessandro1, Lorenzo Codecasa2, Alberto Castellazzi3, Giovanni Breglio1, Andrea Irace1

(1Department of Electrical Engineering and Information Technologies, University Federico II, Naples, Italy; 2Department of Electronics, Information and Bioengineering, Politecnico di Milano, Milan, Italy; 3Solid-State Power Processing (SP2) Lab, Faculty of Engineering, KUAS, Kyoto, Japan)


Impact of Chip-Package-PCB Design on the Optimization of AC/DC Switched Mode Power Supply Using Time Domain Analysis

Bogdan Popescu2, Ivana Kovacevic-Badstuebner1

(1ETH Zurich, Switzerland; 2Infineon AG, Germany)


A Direct Bond Fabrication Process for Compact GaN Power Modules on Liquid Coolers for EV Applications

Namjee Kim2, Weijia Zhang2, Jingyuan Liang2, Wentao Cui2, Andrei Catuneanu1, Matthew Birkett1, John Burgers1, Wai Tung Ng2

(1Dana Corp., Canada; 2University of Toronto, Canada)

Advances on Fin-FETs & Alternative p-type Materials for GaN Devices


Jiun-Lei Yu(TSMC)
Hideyuki Okita(Panasonic)

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-Mode GaN Transistors

Taifang Wang, Mohammad Samizadeh, Nela Luca, Elison Matioli

(EPFL, Switzerland)


Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability

Yunwei Ma4, Ming Xiao4, Zhonghao Du3, Xiaodong Yan3, Kai Cheng1, Michael Clavel4, Mantu Hudait4, Lei Tao4, Feng Lin4, Kravchenko Ivan2, Han Wang3, Yuhao Zhang4

(1Enkris Semidonductor Inc., China; 2Oak Ridge National Lab, United States; 3University of South Carolina, United States; 4Virginia Tech, United States)


High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

Luca Nela3, Catherine Erine3, Jun Ma3, Halil Kerim Yildirim3, Remco van Erp3, Peng Xiang2, Kai Cheng2, Elison Matioli1

(1Ecole polytechnique federale de Lausanne (EPFL), Switzerland; 2Enkris Semiconductor Inc, China; 3EPFL, Switzerland)


p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices

Alessandro Floriduz, Riyaz Abdul Khadar, Taifang Wang, Catherine Erine, Remco van Erp, Luca Nela, Reza Soleimanzadeh, Pirouz Sohi, Elison Matioli

(Ecole Polytechnique Federale de Lausanne (EPFL), Switzerland)

Thursday June 03, 2021

Simulation Analysis for Silicon Vertical Devices


Yuichi Onozawa(Fuji Electric)
Takahiro Mori(Renesas Electronics Corp.)

Design Optimization of Multiple Stepped Oxide Field Plate Trench MOSFETs with Machine Learning for Ultralow On-Resistance

Hiro Gangi1, Yasunori Taguchi1, Kouta Nakata1, Hiroki Nemoto1, Yusuke Kobayashi1, Tomoaki Inokuchi1, Kazuto Takao1, Kenya Kobayashi2

(1Toshiba Corporation, Japan; 2Toshiba Electronic Devices & Storage Corporation, Japan)


Gate Drive Techniques of Gate-Connected Trench Field Plate Power MOSFETs to Reduce Both Switching and Conduction Losses

Tatsuya Nishiwaki, Tsuyoshi Kachi, Yusuke Kawaguchi, Shinichi Umekawa

(Toshiba Electronic Devices & Storage Corporation, Japan)


Dynamic in-Chip Current Distribution Simulation Technology for Power Device Layout Design

Takashi Saito

(Renesas Electronics Corp., Japan)


1200V Bidirectional FS-IGBT (BFS-IGBT) with Superior turn-Off Capability

Masahiro Tanaka2, Naoki Abe2, Akio Nakagawa1

(1Nakagawa Consulting Office, LLC., Japan; 2Nihon Synopsys G.K., Japan)

Packaging Technologies: Characterization & Reliability


Alberto Castellazzi(Kyoto University of Advanced Science)
Yang Xu(Tesla)

Improved DICM with an IR Camera for Imaging of Strain and Temperature in Cross Section of to Packages

Yoshiki Masuda, Akihiko Watanabe, Ichiro Omura

(Kyushu Institute of Technology, Japan)


DUT Temperature Coefficient and Power Cycles to Failure

Yuma Kawauchi, Kenji Akimoto, Akihiko Watanabe, Ichiro Omura

(Kyushu Institute of Technology, Japan)


Comparison of the Power Cycling Performance of Silicon and Silicon Carbide Power Devices in a Baseplate Less Module Package at Different Temperature Swings

Felix Hoffmann2, Stefan Schmitt1, Nando Kaminski2

(1Semikron Elektronik GmbH&Co. KG, Germany; 2University of Bremen, Germany)


Development of Solder Deterioration Diagnosis System of a Power Module via the Acoustic Emission Monitoring Technique

Zheng Zhang2, Aiji Suetake2, Chuantong Chen2, Katsuaki Suganuma2, Hiroshi Ishino1, Hirokazu Sampei1, Takeshi Endo1, Kazuhiko Sugiura1, Kazuhiro Tsuruta1

(1MIRISE TECHNOLOGIES CORPORATION, Japan; 2Osaka University, Japan)

Vertical Low Voltage Devices


Takahiro Mori(Renesas Electronics Corp.)
Mark Gajda(Nexperia)

Integrated Termination Ballast to Mitigate Avalanche Hotspots in Trench Field Plate Power MOSFETs

Tanuj Saxena, Christian Torrent, Vishnu Khemka, Ganming Qin, Moaniss Zitouni

(NXP Semiconductors Inc., France; NXP Semiconductors Inc., United States)


Stacked Chip of Si Power Device with Double Side Cu Plating for Low on-Resistance

Tatsuya Ohguro, Hideharu Kojima, Takuma Hara, Tatsuya Nishiwaki, Shinichi Umekawa

(Toshiba Electronic Devices & Storage Corporation, Japan)


Drift Layer Design Utilizing Intermediate Boron Ion-Implantation for 100-V-Class Two-step-Oxide Field-Plate Trench MOSFET to Improve Switching Loss

Kenya Kobayashi, Hiroaki Kato, Kikuo Aida, Akihiro Goryu, Tatsuya Nishiwaki

(Toshiba Electronic Devices & Storage Corporation, Japan)


Experimental of Folded Accumulation Lateral Double-diffused Transistor with Low Specific On Resistance

Yandong Wang, Baoxing Duan, Yintang Yang

(Xidian University, China)

Poster Sessions

See also Presenter instructions

IC Design

Xin Ming(University of Electronic Science and Technology)

Slope Sensing for Optimum Dynamic Gate Driving of SiC Power MOSFETs

Wen Tao Cui2, Wei Jia Zhang2, Mengqi Wang2, Jingyuan Liang2, Haruhiko Nishio1, Hitoshi Sumida1, Hiroyuki Nakajima1, Wai Tung Ng2

(1Fuji Electric Co. Ltd, Japan; 2University of Toronto, Canada)

Novel Integrated Low Capacitance Transient Voltage Suppressor Array with Capacitance Equalization Technique for System-Level EOS/ESD Protection

Zhao Qi, Ming Qiao, Fei Zhao, Zhaoji Li, Bo Zhang

(University of Electronic Science and Technology of China, China)

SiC Devices & Technology

Naruhisa Miura(Mitsubishi Electric)

Comparison of Short Circuit Robustness and Failure Mechanisms of GaN/SiC Cascode Devices and SiC Power MOSFETs

Jiahui Sun, Kailun Zhong, Zheyang Zheng, Gang Lyu, Kevin Jing Chen

(Hong Kong University of Science and Technology, China)

1.2 kV 4H-SiC DMOSFETs with Si-Implanted Surface: Performance Enhancement and Reliability Evaluation

Jia-Wei Hu3, Jheng-Yi Jiang3, Pin-Wei Huang3, Shun-Wei Tang1, Zhen-Hong Huang1, Tian-Li Wu1, Chih-Fang Huang3, Kung-Yen Lee2

(1National Chiao Tung University, Taiwan; 2National Taiwan University, Taiwan; 3National Tsing Hua University, Taiwan)

Comprehensive Study of Electrical Characteristics in 1.2 kV SiC SBD-Integrated Trench and Planar MOSFETs

Kevin Matsui1, Ruito Aiba1, Masakazu Baba2, Shinsuke Harada2, Hiroshi Yano1, Noriyuki Iwamuro1

(1Graduate School of Pure and Applied Sciences, University of Tsukuba, Japan; 2National Institute of Advanced Industrial Science and Technology, Japan)

Experimental and Numerical Demonstration of Superior RBSOAs in 1.2 kV SiC Trench and SBD-Integrated Trench MOSFETs

Shunki Todaka1, Kevin Matsui1, Ruito Aiba1, Masakazu Baba2, Shinsuke Harada2, Hiroshi Yano1, Noriyuki Iwamuro1

(1Graduate School of Pure and Applied Sciences, University of Tsukuba, Japan; 2National Institute of Advanced Industrial Science and Technology, Japan)

Avalanche Capability of 650-V Normally-Off GaN/SiC Cascode Power Devices

Kailun Zhong, Jiahui Sun, Yuru Wang, Gang Lyu, Sirui Feng, Tao Chen, Kevin J. Chen

(ECE Department, HKUST, Hong Kong)

Improving the Specific on-Resistance and short-Circuit Ruggedness tradeoff of 1.2-kV-Class SBD-Embedded SiC MOSFETs Through Cell Pitch Reduction and Internal Resistance

Hiroshi Kono2, Shunsuke Asaba2, Teruyuki Ohashi1, Takahiro Ogata2, Masaru Furukawa2, Kenya Sano2, Masakazu Yamaguchi2, Hisashi Suzuki2

(1Corporate Research & Development Center, Toshiba Corporation, Japan; 2Toshiba Electronic Devices & Storage Corporation, Japan)

Avalanche Reliability of planar-Gate SiC MOSFET with Varied JFET Region Width and its Balance with Characteristic Performance

Zhengyun Zhu, Na Ren, Hongyi Xu, Li Liu, Kuang Sheng

(Zhejiang University, China)

Performance and Robustness of 6500 V SiC DMOSFETs with Integrated JBS Diodes

Siddarth Sundaresan, Jaehoon Park, Vamsi Mulpuri, Ranbir Singh

(GeneSiC Semiconductor, United States)

Degradation Investigations on Asymmetric Trench SiC Power MOSFETs Under Repetitive Unclamped Inductive Switching Stress

Hao Fu, Jiaxing Wei, Xiaowen Yan, Hangbo Zhao, Zhaoxiang Wei, Hua Zhou, Siyang Liu

(Southeast University, China)

Gate-Oxide Reliability of 1.2kV and 6.5kV SiC MOSFETs Under Stair-Shaped Increase of Positive and Negative Gate Bias

Roman Boldyrjew-Mast, Sven Thiele, Nora Schöttler, Thomas Basler, Josef Lutz

(Chemnitz University of Technology, Germany)

Surge Current Capability Evaluation of 6.5kV SiC MOSFETs with 3D Cell Layouts

Kaloyan Naydenov2, Nazareno Donato2, Florin Udrea2, Andrei Mihaila1, Gianpaolo Romano1, Stephan Wirths1, Lars Knoll1

(1Hitachi-ABB Power Grids Switzerland Ltd., Switzerland; 2University of Cambridge, United Kingdom)

A Compact and Cost-Efficient Edge Termination Design for High Voltage 4H-SiC Devices

Tianxiang Dai, Luyang Zhang, Oliver Vavasour, Arne Renz, Vishal Shah, Marina Antoniou, Philip Mawby, Peter Gammon

(University of Warwick, United Kingdom)

Effect of gate-Source Bias Voltage and gate-Drain Leakage Current on the short-Circuit Performance of FTO-Type SiC Power MOSFETs

Frederic Richardeau4, Alessandro Borghese5, Alberto Castellazzi3, Andrea Irace1, Vanessa Chazal2, Gerald Guibaud2

(1DIETI, University of Naples “Federico II”, Italy, Italy; 2ITEC Lab, THALES, Toulouse, France; 3Kyoto University of Advanced Science, Japan; 4LAPLACE, University of Toulouse, CNRS, Toulouse INP, UPS, France; 5SP2 Lab, Engineering Faculty, KUAS/ DIETI, University of Naples “Federico II”, Italy, Japan)

Temperature Dependent Transient Threshold Voltage Hysteresis in SiC Power MOSFETs and Implications for Short Circuit Events

Elena Mengotti1, Enea Bianda1, David Baumann1, Renos Papamichalis1, Andrei Mihaila2, Stephan Wirths2

(1ABB Switzerland Ltd., Switzerland; 2Hitachi ABB Power Grids Ltd., Switzerland)

Rugged Dynamic Behaviour of 3.3kV SiC Power MOSFETs with High-K Gate Dielectric

Gianpaolo Romano, Stephan Wirths, Andrei Mihaila, Yulieth Arango, Antoni Ruiz, Lars Knoll

(Hitachi ABB Power Grids Ltd., Switzerland)

Monolithic Integration of Lateral HV Power MOSFET with LV CMOS for SiC Power IC Technology

Sundar Babu Isukapati2, Hua Zhang3, Tianshi Liu3, Emran Ashik1, Bongmook Lee1, Adam Morgan2, Woongje Sung2, Ayman Fayed3, Anant Agarwal3

(1North Carolina State University, United States; 2SUNY Polytechnic Institute, United States; 3The Ohio State University, United States)

Low Voltage Devices & Power IC Device Technology

Riccardo Depetro(STMicroelectronics)

Power Loss Reduction of Low-Voltage Power MOSFET by Combination of Assist Gate Structure and Gate Control Technology

Wataru Saito1, Shin-Ichi Nishizawa2

(1Kyushu Universitty, Japan; 2Kyushu University, Japan)

Robustness Enhancement of the Floating NBL BCD Architecture: Parasitics Suppression and Addition of Partially Isolated Diode for Localized Voltage Control

Moshe Agam2, Jaroslav Pjenčák2, Johan Janssens1

(1Product Design, Belgium; 2Technology Development, United States; 2Technology Development, Czech Rep.)

Machine-Learning Based TCAD Optimization Method for Next Generation BCD Process Development

Jaehyun Yoo, Yongwoo Jeon, Dawon Jung, Junhyuk Kim, Jisu Ryu, Ohkyum Kwon, Yongdon Kim, Kwangtea Kim, Kyuok Lee, Jeahyun Jung, Uihui Kwon, Daesin Kim

(Samsung Electronics, Korea)

Low-Temperature Fabricated Amorphous Oxide Semiconductor Heterojunction Diode for Monolithic 3D Power Integration Applications

Xianda Zhou2, Lei Lu1, Kai Wang2, Yang Liu2, Johnny K.O. Sin3

(1Peking University, China; 2Sun Yat-sen University, China; 3The Hong Kong University of Science and Technology, Hong Kong)

A Cost Effective and Highly Manufacturable Approach to Extending a BCD 70V Technology to 200V

Weize Chen, Jaroslav Pjencak, Moshe Agam, Johan Janssens, Rick Jerome, Santosh Menon, Mark Griswold

(ON Semiconductor, Belgium; ON Semiconductor, Czech Rep.; ON Semiconductor, United States)

Addressing the Challenges of sub-50nm Channel LDMOS

Brendan Toner3, Christoph Ellmers2, Stefan Eisenbrandt4, Liu Zhengchao3, Darin Davis1, Gary Dolny1, Terry Johnson1, William Richards1

(1Silicet Inc., United States; 2X FAB Dresden GmbH, Germany; 3X FAB Sarawak Sdn. Bhd., Malaysia; 4X-FAB Global Services GmbH, Germany)

On Precise Current Sensors for LV Trench MOSFETs

Radim Spetik, Justin Yerger, Ladislav Seliga, Filip Kudrna, Santosh Menon, Bruce Greenwood

(ON Semiconductor, Czech Rep.; ON Semiconductor, United States)

An Improved Negative Transient Voltage Noise Immunity for an HVIC Using Self-Shielding Structure

Akihiro Jonishi, Masaharu Yamaji, Takahide Tanaka, Hitoshi Sumida

(Fuji Electric Co., Ltd., Japan)

Investigation on the Single-Event Burnout and Hardening of the 500V SOI Lateral-IGBT

Qian Yiwen, Wu Wangran, Yang Guangan, Yang Jing, Zhang Long, Sun Weifeng

(Southeast University, China)

Reverse Recovery and Carrier Lifetime in Body Diodes of LDMOS Transistors

Vin Loong Choo1, Martin Pfost1, Jörg Gessner2, Klaus Heinrich2, Uwe Eckoldt2

(1TU Dortmund University, Germany; 2XFAB Global Services GmbH, Erfurt, Germany)

Figure-of-Merit for Laterally Diffused MOSFETs with Rectangular and Semi-Cylindrical Field Oxides

Ali Saadat2, Maarten Van de Put2, Hal Edwards1, William Vandenberghe2

(1Texas Instrument Inc., United States; 2The University of Texas at Dallas, United States)

Study of Unique ESD Tolerance Dependence on Backgate Ratio for RESURF LDMOS with Rated Voltage Variation

Kanako Komatsu, Koichi Ozaki, Fumio Takeuchi, Daisuke Shinohara, Tomoko Kinoshita, Yoshiaki Ishii, Toshihiro Sakamoto, Fumitomo Matsuoka

(Toshiba Electronic Devices & Storage Corporation, Japan)

GaN Devices & Technology

Sameh Khalil(Infineon Technologies)

In Depth TCAD Analysis of Threshold Voltage on GaN-on-Si MOS-Channel Fully Recessed Gate HEMTs

Marie-Anne Jaud1, William Vandendaele1, Bledion Rrustemi1, Abygaël G. Viey1, Simon Martin1, Cyrille Le Royer1, Laura Vauche1, Sébastien Martinie1, Erwan Morvan1, Romain Gwoziecki1, Roberto Modica2, Ferdinando Iucolano2

(1CEA-LETI, France; 2STMicroelectronics, Italy)

Characteristics of Hetero-Integrated GaN-HEMTs on CMOS Technology by Micro-Transfer-Printing

Richard Reiner1, Ralf Lerner4, Patrick Waltereit1, Nis Hauke Hansen4, Stefan Moench1, Alin Fecioru3, David Gomez2

(1Fraunhofer IAF, Germany; 2X-Celeprint Inc, United States; 3X-Celeprint Ltd, Ireland; 4X-FAB Global Services GmbH, Germany)

Determination of Hard- and Soft-Switching Losses for Wide Bandgap Power Transistors with Noninvasive and Fast Calorimetric Measurements

Julian Weimer, Dominik Koch, Ingmar Kallfass

(University of Stuttgart, Germany)

High Performance Quasi-Vertical GaN Junction Barrier Schottky Diode with Zero Reverse Recovery and Rugged Avalanche Capability

Feng Zhou2, Weizong Xu2, Fangfang Ren2, Dunjun Chen2, Rong Zhang2, Youdou Zheng2, Tinggang Zhu1, Hai Lu2

(1CorEnergy Semiconductor Co. Ltd., Suzhou, China, China; 2School of Electronic Science and Engineering, Nanjing University, Nanjing, China, China)

Investigation of GaN-on-Si and GaN-on-SOI Substrate Capacitances for Discrete and Monolithic Half-Bridges

Stefan Moench1, Richard Reiner1, Patrick Waltereit1, Rüdiger Quay1, Oliver Ambacher1, Ingmar Kallfass2

(1Fraunhofer IAF, Germany; 2University of Stuttgart, Germany)

Threshold Voltage Engineering in Al2O3/AlGaN/GaN MISHEMTs with Thin Barrier layer: MIS-Gate Charge Control and High Threshold Voltage Achievement

Liang He3, Liuan Li2, Jialin Zhang1, Yiqiang Ni1, Jinwei Zhang2, Qianshu Wu2, Yang Liu2

(1No.5 Electronics Research Institute of the Ministry of Industry and Information Technology, China; 2Sun Yat-Sen University, China; 3Sun Yat-Sen University;No.5 Electronics Research Institute of the Ministry of Industry and Informati, China)

A New JTE Technique for Vertical GaN Power Devices by Conductivity Control Using Boron Implantation Into p-Type Layer

Yoshinao Miura, Hirohisa Hirai, Akira Nakajima, Shinsuke Harada

(AIST, Japan)

High Voltage Devices

Noriyuki Iwamuro(University of Tsukuba)

RC-GID-IGBT: a Novel Reverse-Conducting IGBT with a Gate Voltage Independent Diode Characteristic and Low Power Losses

Quang Tien Tran2, Hans-Günter Eckel2, Franz-Josef Niedernostheide1, Frank Pfirsch1, Anton Mauder1, Roman Baburske1

(1Infineon Technologies AG, Germany; 2University of Rostock, Germany)

Study About FZ/MCZ Si Wafer (Mother) Material Carbon and Oxygen Density for RC-IGBT with Electron Beam Irradiation Based on Electrical and Physical Analysis

Haruhiko Minamitake, Takuya Yoshida, Kenji Suzuki, Yuki Haraguchi, Taiki Hoshi, Hidenori Koketsu, Yusuke Miyata, Atsushi Narazaki

(Mitsubishi Electric Corporation, Japan)

Depletion MOS Controlled Regulator Diode Based on Bipolar Carrier Transport

Ming Qiao2, Yong Chen2, Dican Hou2, Linrong He2, Peipei Meng2, Sen Zhang1, Zhaoji Li2, Bo Zhang2

(1CSMC Technologies Corporation, China; 2University of Electronic Science and Technology of China, China)

Snap-Back Free 3.3 kV RC-IGBT with Enhanced Safe Operating Area

Tanya Trajkovic1, Vasantha Pathirana1, Nishad Udugampola1, Florin Udrea1, Chunlin Zhu2, Yangang Wang2

(1Cambridge Microelectronics Ltd, United Kingdom; 2Dynex Semiconductor Ltd, United Kingdom)

Ultra Low Switching Loss Triple-Gate Controlled IGBT

Tatsunori Sakano1, Kazuto Takao1, Yoko Iwakaji2, Hiroko Itokazu2, Tomoko Matsudai2

(1Toshiba Corporation, Japan; 2Toshiba Electric Devices & Storage Corporation, Japan)

Benchmarking of Digital Gate Driven IGBTs: New Eoff-Vsurge Trade-Off Approach

Kouji Harasaki, Masanori Tsukuda, Ichiro Omura

(Kyushu Institute of Technology, Japan)

Module & Package Technologies

Wei-Chung Lo(Industrial Technology Research Institute (ITRI))

Investigation on the Impact of Environmental Stress on the Thermo-Mechanical Reliability of IGBTs by Means of Consecutive H3TRB and PCT Testing

Felix Hoffmann2, Stefan Schmitt1, Nando Kaminski2

(1Semikron Elektronik GmbH&Co. KG, Germany; 2University of Bremen, Germany)

Influence of Low Junction Temperature Swing on the Power Cycling Lifetime of Bond Wire

Jie Chen, Erping Deng, Zixuan Zhao, Yongzhang Huang

(North China Electric Power University, China)

Practical Limits of Liquid Cooling Electric Vehicle Power Modules

Andrei Catuneanu1, John Burgers1, Pascal Fleury2, Weijia Zhang3, Wai Tung Ng3

(1Dana Canada Corporation, Canada; 2Dana TM4, Canada; 3University of Toronto, Canada)

A 48 V, 300 kHz, High Current DC/DC-Converter Based on Paralleled, Asymmetrical & Thermally Optimized PCB Embedded GaN Packages with Integrated Temperature Sensor

Dominik Koch2, Ankit Sharma1, Julian Weimer2, Mathias Weiser2, Till Huesgen1, Ingmar Kallfass2

(1University of Applied Science Kempten, Germany; 2University of Stuttgart, Germany)

Low Temperature Cu Sinter Joining on Different metallization Substrates and its Reliability Evaluation with a Large Power Density

Chuantong Chen2, Aya Iwaki2, Aiji Suetake2, Kazuhiko Sugiura1, Kiyoshi Kanie3, Katsuaki Suganuma2

(1MIRISE Technologies Corporation, Japan; 2Osaka University, Japan; 3Tohoku University, Japan)

Transient Stability Analysis of Discrete and Multi-Chip Power Semiconductor Packages

Dan Popescu2, Ivana Kovacevic-Badstuebner1

(1ETH Zurich, Switzerland; 2Infineon AG, Germany)

Ultra-Low Loss on-Chip Magnetic Inductors in the far-BEOL for High Frequency Power Electronics

Zishan Ali Syed Mohammed, Lulu Peng, Patrick Rohlfs, Yong Chau Ng, Lothar Lehmann, Chor Shu Cheng, Lawrence Selvaraj, Marcel Wieland

(GlobalFoundries, Germany; GlobalFoundries, Singapore)

Importance of SiC MOSFETs Variability for the Reliability Design Aspects of Multichip Power Modules

Salvatore Race, Thomas Ziemann, Ivana Kovacevic-Badstuebner, Roger Stark, Shweta Tiwari, Ulrike Grossner

(ETH Zurich, Switzerland)


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